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Updated: Jun 10, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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在MoS2晶体的层数和堆叠工程,用于高性能极化敏感光电探测器

Aiqing Fan1,2,3, Qing Zhang1,2,3, Zebin Ren4,5,3

  • 1Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.

ACS applied materials & interfaces
|October 18, 2024
PubMed
概括

研究人员开发了一种新的化学蒸汽沉积方法,用于精确控制堆叠的二维 (2D) 二硫化物 (MoS2) 晶体. 这使得先进的光电子设备具有增强的灵敏度和偏振依赖性能.

关键词:
两维材料是二维材料.化学蒸气沉积 化学蒸气沉积一个光电探测器.第二个波的第二代波.过渡金属二甲基二甲基化物

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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