相关实验视频

Updated: Jun 10, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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低接触电阻 WSe2p型晶体管,具有高度稳定的CMOS兼容剂

Inha Kim1,2, Naoki Higashitarumizu1,2,3, I K M Reaz Rahman1,2

  • 1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.

Nano letters
|October 18, 2024
PubMed
概括

化对化 (WSe2) 晶体管的化兴奋剂显著降低了接触电阻. 这一突破使得高性能p型晶体管具有更好的稳定性,用于先进的电子产品.

关键词:
在FETs中,FETs是FET.充电转移兴奋剂的使用高稳定性 高稳定性tungsten diselenide 的使用情况这是二维材料的二维材料.

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