Ge-Sb-Te

Ting-Ting Jiang1, Xu-Dong Wang1, Jiang-Jing Wang1,2

  • 1Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.

Fundamental research
|October 21, 2024
PubMed
概括

在Ge-Sb-Te合金中的结构障碍是相变记忆的关键. 这项研究揭示了GeSb2Te4结构转换期间的空缺排序,影响了先进计算的电子特性.