评估功能性能的自我纠正的被动横杆阵列使用潜入路径当前的功能性能的评估
Ziang Chen1,2, Xianyue Zhao1,2, Christopher Bengel3
1Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743, Jena, Germany.
Scientific reports
|October 21, 2024
概括
一个新的指标,Sneak-path Current (SC),有效地评估了跨条数组中的自我纠正的记忆器件. 这种方法克服了传统评估的局限性,确保了可靠的内存计算性能.
科学领域:
- 材料科学与工程 材料科学与工程
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 自行纠正的memristive设备为低功耗内存计算提供了潜力.
- 通过这些设备来描述被动横杆阵列是很困难的,因为寄生虫的潜入路径电流.
- 现有的方法,如阅读边际评估,受到电压分隔器效应的限制.
研究的目的:
- 为了引入一种新的性能指标,Sneak-path Current (SC),用于评估被动横条数组.
- 为了应对跨条架构中特征性设备的挑战.
- 为了提供隐藏路径当前与读取边缘的相互作用的定量测量.
主要方法:
- 提出了一个新的度量,SC,利用潜伏路径电流进行功能性行为评估.
- 采用负校正因子 (和) 来分析横跨偏差和阻力状态的动态校正.
- 使用自我纠正的BiFeO记忆细胞评估了指标.
主要成果:
- 该SC指标量化评估了潜入路径电流和读取边缘之间的相互作用.
- 在表征被动横杆阵列方面表现出有效性,解决了一个关键的研究缺口.
- 在BiFeO跨条数组中实现了SC<2.19E-2的读取边缘>0.
结论:
- 该 SC 度量提供了一个优越的替代传统度量来评估 memristive 横条数组.
- 通过使用自我纠正的memristive设备成功验证了被动横杆阵列的功能性能.
- 这项工作为更可靠,更高效的内存计算架构铺平了道路.
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