MIMMIM

Huan Liu1,2,3, Ze Feng4, Fei Yu3

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, PR China.

PubMed
概括

这项研究调查了无形氧化物金属绝缘体金属设备的铁电类行为. 研究人员确定了氧离子和空位迁移作为关键机制,澄清了它们的起源和未来设备工程的运输方式.