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Updated: Jun 9, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

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在基于纳米线的Al/InAs门控制的超导开关中切换动态

Tosson Elalaily1,2,3,4, Martin Berke1,2, Ilari Lilja4,5

  • 1Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Müegyetem rkp. 3., H-1111, Budapest, Hungary.

Nature communications
|October 23, 2024
PubMed
概括

研究人员观察到超导纳米线中的门诱导的波动,将它们与泄漏电流联系起来. 这说明了门控制超电流 (GCS) 效应的起源,这对于超导晶体管至关重要.

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