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在矿 (K,Na) NbO₃铁电器中调整光学吸收

V Vetokhina¹, N Nepomniashchaia¹, E de Prado¹

¹Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic.

Materials advances

|October 24, 2024

概括

在铁电 (K,Na) NbO3薄膜和陶中使用弱 (Ba,Ni) 兴奋剂并没有改变带隙,但显示了子间隙光学吸收. 这种吸收与矿氧化物中的结构带尾部和格子应变有关.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
铁路电力是铁路的电力.

背景情况:

在电子和光电子应用中,定制电子带结构和矿氧化物中的光学吸收是至关重要的.
阴离子替代提供了一条修改材料性质的途径.

研究的目的:

研究弱 (Ba,Ni) 兴奋剂对 (K,Na) NbO3铁电薄膜和陶中的光学带隙的影响.
探索这些材料中子间隙光学吸收的起源.

主要方法:

在广泛的光谱范围 (0.7-8.8 eV) 中进行光学吸收测量.
分析多晶和上膜,以及陶,具有不同的兴奋剂水平和缺氧.
在不同的材料形式和条件下比较光学特性.

主要成果:

1-2%的阴离子替代或高达10%的氧气空缺不会显著影响直接 (~4.5 eV) 和间接 (~3.9 eV) 带隙.
实质性的子间隙光学吸收被观察到在化表层膜和陶中.
这种子间隙吸收归因于结构带尾部和格子应变异质.

结论:

弱 (Ba,Ni) 兴奋剂没有有效地减少 (K,Na) NbO3.3的带隙.
受格子应力影响的结构性诱导的亚隙光学吸收是矿铁电中显著的现象.
这一发现对理解和利用相关铁电陶和薄膜的光学特性有影响.

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