Thermal Sigmatropic Reactions: Overview
Boundary Layer Characteristics
Metal-Semiconductor Junctions
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Updated: Jun 9, 2025

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Vivek Devulapalli1, Enze Chen2, Tobias Brink1
1Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
铁在中的分离稳定了在粒边界 (GB) 的独特的二面体. 这些子形成了不同的,分层的GB阶段,为材料设计提供了新的途径.
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
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