上下吸附:表面和表面基密度对溢出的反直觉影响
Kelle D Hart1, Margaret J Hollobaugh1, Audrey M Battiste1
1Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
溢出 (H*) 涉及移动原子从金属纳米粒子迁移到支物. 从支持中去除基组令人惊地增加了溢出,表明效应主导吸附热力学.
科学领域:
- 催化剂
- 表面科学
- 材料化学
背景情况:
- 溢出 (H*) 是一个对催化异常至关重要的现象.
- 量化H* 支持相互作用是具有挑战性的.
- 之前的工作量化了Au/TiO2催化剂的可逆H2吸附.
研究的目的:
- 研究表面化在溢热力学中的作用.
- 开发处理和量化表面基组的方法.
- 了解氧化物支上的H*吸附的热力学驱动因素.
主要方法:
- 热重力测量分析 (TGA) 和富里埃变换红外光谱 (FTIR).
- 在TiO2支架上对表面氧化物 (TiOH) 密度进行系统的操纵.
- 范特霍夫研究以确定恒定H*覆盖的吸附和.
主要成果:
- 删除表面基组增加了溢出.
- 脱水氧化表面表现出更好的溢出热力学.
- 观察到强烈的和相关性,将表面和H*配置联系起来.
结论:
- 表面化对溢出热力学产生重大影响.
- 度效应,而不是度,似乎主导着低覆盖度的吸收.
- 在现场脱氧化可以作为增强溢出过程的动力测试.
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