在电的中增强超导过渡温度.
D P Pappas1, D E David2, R E Lake1
1National Institute of Standards and Technology, Boulder, Colorado 80305, USA.
Applied physics letters
|October 25, 2024
概括
与贵金属多层的电 (Re) 薄膜具有接近6K的增强超导性. 这一进步使其能够集成到标准的低温电子元件中.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 超导电性 超导电性 超导电性
背景情况:
- (Re) 是一种耐火金属,具有潜在的超导特性.
- 之前的Re膜制备方法在实现最佳超导特性方面存在局限性.
- 多层结构提供了一条调整材料特性 (包括超导性) 的途径.
研究的目的:
- 为了研究电 Re 薄膜的超导特性,这些薄膜在多层中含有贵金属 (Cu,Au,Pd).
- 为了确定电是否提高了与其他制备方法相比的超导临界温度 (Tc).
- 评估将这些超导薄膜集成到电子元件中的潜力.
主要方法:
- 在Cu,Au和Pd的多层结构中,Re膜的电沉积.
- 测量直流电阻和磁性易感性,以确定超导的临界温度 (Tc).
- 在低温下测量磁场响应,以描述超导体类型和关键场.
- 在沉积的多层上测量射频 (RF) 损失.
主要成果:
- 多层电 Re 薄膜呈现出大约 6 K 的增强超导临界温度 (Tc).
- 证实了II型超导性,其上临界场 (Hc2) 在1.8 K时约为2.5 T.
- 在液温度以上测量了超过10^7 A/m^2的临界电流密度 (Jc).
- 在电路板上的铜痕迹上集成的多层中,在Tc以下观察到低射频损失.
结论:
- 电是一种有效的方法,用于制备具有提高临界温度的基于Re的超导多层.
- 证明的II型超导和高临界电流密度使这些薄膜适合应用.
- 与标准电路板制造的兼容性有助于整合到各种低温电子设备中.
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