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Updated: Jun 9, 2025

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设计和模拟,以最大限度地减少CsGeI2Br 洛夫斯基特太阳能电池中的非辐射重组损失

Tingxue Zhou1, Xin Huang1, Diao Zhang1

  • 1Institute of Advanced Materials, Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy, School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.

Nanomaterials (Basel, Switzerland)
|October 25, 2024
PubMed
概括

这项研究使用数值模拟优化了无CsGeI2Br矿太阳能电池 (PSC). 在模拟中包括Auger重组对于准确的效率预测至关重要,防止对设备性能进行高估.

关键词:
在CsGeI2Br中.缺陷 缺陷 缺陷 缺陷 缺陷非辐射重组的非辐射重组.数字模拟的数字模拟.矿太阳能电池是如何使用的

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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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