灵活的p型WSe2晶体管与顶门介电器
Quỳnh Thị Phùng1,2, Lukas Völkel1, Agata Piacentini1,3
1Chair of Electronic Devices, RWTH Aachen University, 52074 Aachen, Germany.
ACS applied materials & interfaces
|October 25, 2024
概括
灵活的 tungsten diselenide (WSe2) 场效应晶体管 (FET) 使用一种新的传输方法实现高排水电流. 这种方法对先进的灵活电子和互补晶体管技术具有前景.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- Tungsten Diselenide (WSe2) 场效应晶体管 (FET) 为互补电路提供可调节的极性,并通过材料转移适用于灵活的电子.
- 在灵活的WSe2 FET中实现高性能仍然是一个挑战,特别是在排水电流和电荷捕获方面.
研究的目的:
- 为了证明具有高绝对排水电流的柔性p型WSe2FET.
- 通过金属有机化学蒸汽沉积 (MOCVD) 培养的 WSe2 和灵活电子的联合传输方法来研究一种制造方法.
- 分析电荷捕获效应及其对设备性能的影响.
主要方法:
- 使用WSe2和金属接触传输技术的组合制造灵活的顶端 WSe2 FET.
- 通过金属有机化学蒸汽沉积 (MOCVD) 在蓝宝石基板上增加WSe2.
- 使用脉冲和偏向应力测量来分析电荷捕获的表征.
主要成果:
- 经过证明的灵活的p型WSe2 FET,绝对排水电流 (RSAID) 高达7μA/μm.
- 实现了高的ID开/关比 (大约10^5),与脱皮单晶WSe2设备相比或优于它们.
- 在脉冲过程中观察到高排水电流的保存,表明电荷捕获最小化.
结论:
- 开发的制造方法有利于在灵活的2D晶体管中实现高排水电流.
- 该方法可以实现高性能灵活的WSe2 FET,适合新兴电子应用.
- 该研究强调了MOCVD培养的WSe2和转移技术对先进柔性电子的潜力.
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