Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

711
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
711
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

298
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
298

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

2s-DAS: Two-Stream Diffusion with Multi-Modal Fusion for Temporal Action Segmentation.

Journal of imaging·2026
Same author

Integrating machine learning-based molecular design with experimental validation for the discovery of EGFR inhibitors in lung cancer.

Molecular diversity·2026
Same author

Charge density wave in a band insulator.

Nature communications·2026
Same author

Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 10<sup>6</sup> On/Off Ratio under ±1 V Gate-Voltage Sweep.

Nano letters·2026
Same author

Laser-Induced Spin-Lattice Coupling and the Emergence of Ferrimagnetic State in Kagome Metal RbV<sub>3</sub>Sb<sub>5</sub>.

ACS nano·2026
Same author

Enriched Environment Suppresses Neuronal Ferroptosis Through SIRT1/AKT/GSK3β-Dependent Glycogen Metabolic Reprogramming After Cerebral Ischemia-Reperfusion.

Antioxidants (Basel, Switzerland)·2026
Same journal

High Pressure Synthesis of Ultrasmall Nanodiamonds with Nitrogen Vacancy Centers.

Nano letters·2026
Same journal

Efros-Shklovskii Law at the Thinnest Limit of a Material.

Nano letters·2026
Same journal

Oxygen Electronic Configuration Modulation Triggering Reversible Anionic Redox Chemistry toward High Voltage Tolerant Sodium Layered Oxide.

Nano letters·2026
Same journal

Development of a Nanoscale Protein-Protein Mapping of PDE4 Interface-Disrupting Peptides.

Nano letters·2026
Same journal

Lubricin-Protected Plasmonic Nanoslides Enable Stable, Reusable, Nonfouling, and Ultrasensitive Biomimetic-SERS Sensing for the Detection of Vancomycin in Unprocessed Whole Blood.

Nano letters·2026
Same journal

Forcing a Molecule to Switch: Quantifying Mechanical Control at the Atomic Scale.

Nano letters·2026
查看所有相关文章

相关实验视频

Updated: Jun 9, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K

充电选择性2D异型接口驱动的多功能浮动门内存用于现场传感-内存-计算.

Ce Li1,2, Xi Chen3,4, Zirui Zhang1,2

  • 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.

Nano letters
|October 25, 2024
PubMed
概括
此摘要是机器生成的。

这项研究引入了一种新的二硫化物 (PtS2) 异构连接,用于先进的数据存储. 这种新材料可以实现超快的操作,高开/关比,并长时间保留集成传感和计算.

关键词:
闪存记忆 闪存记忆是一种闪存记忆.选择性充电道的道设计传感 - 记忆 - 计算范德瓦尔斯的异质连接.

更多相关视频

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.3K

相关实验视频

Last Updated: Jun 9, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.3K

科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术纳米技术
  • 固态物理 固态物理

背景情况:

  • 闪存,尽管在数据存储中广泛使用,但受到了诸如缓慢响应时间和高操作电压等限制.
  • 这些局限性阻碍了集成传感,内存和计算能力的发展,特别是在边缘计算应用中.

研究的目的:

  • 为下一代数据存储和传感器计算开发超薄的范德瓦尔斯异质连接.
  • 通过实现超快速操作,低压和光电子响应来克服传统闪存的局限性.

主要方法:

  • 制造一个超薄的二硫化物 (PtS2) / 六角化物 (hBN) / 多层石墨烯 (MLG) 范德瓦尔斯异质连接,具有原子利的接口.
  • 选择性电荷道行为,超快运行,高开/关比 (10^8),低运行电压,耐用性 (10^5周期) 和数据保留 (>10年) 的特征.
  • 展示了线性突触强化/抑制和可逆调节的光导度过渡.

主要成果:

  • PtS2/hBN/MLG异质连接展示了选择性电荷道,使得超快的操作和10^8.8的高开/关比.
  • 该设备表现出极低的操作电压,强大的耐用性为10^5周期,数据保留时间超过10年.
  • 实现了高度线性突触行为和可逆门调节光导性,并成功地在现场训练了VGG11神经网络,用于CIFAR-10分类,其准确性与数字系统相美.

结论:

  • 开发的范德瓦尔斯异质连接为集成传感,记忆和计算提供了一个有前途的平台.
  • 这项技术有可能通过实现这些功能的无集成来推进边缘计算.