在Cr/CoFeB/MgO和W/CoFeB/MgO中进行电流诱导扭矩的比较研究
Shunya Chiba1,2, Yukihiro Marui1, Hideo Ohno1,3,4,5
1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan.
Nano letters
|October 25, 2024
概括
轨道扭矩 (OT) 和旋转轨道扭矩 (SOT) 在磁性异构结构中进行了比较. 结果显示,OT可以与SOT相比较,SOT系统在特定条件下可能表现出OT.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 这就是Spintronics.
背景情况:
- 对于磁性异构结构,轨道扭矩 (OT) 被争论,与旋转轨道扭矩 (SOT) 相比较.
- SOT是下一代磁还原性随机访问记忆 (MRAM) 的一个有希望的机制.
研究的目的:
- 在代表性系统 (Cr/CoFeB/MgO和W/CoFeB/MgO) 中比较OT和SOT.
- 调查在原型SOT堆中OT的潜在出现情况.
主要方法:
- 制造和表征Cr/CoFeB/MgO和W/CoFeB/MgO的异构结构.
- 层厚度 (Cr,CoFeB,W) 的系统变化.
- 扭矩测量和分析.
主要成果:
- Cr/CoFeB/MgO表现出相当大的扭矩,与W/CoFeB/MgO相比或超过,特别是在更厚的Cr和CoFeB层中.
- 随着W和CoFeB厚度的增加,W/CoFeB/MgO显示了扭矩的明显变化.
- 有证据表明,在W/CoFeB/MgO中,SOT到OT的机制交叉.
结论:
- 轨道扭矩可以在磁性异构结构中显著,与旋转轨道扭矩相竞争.
- 旋转轨道扭矩系统在特定厚度条件下可能表现出轨道扭矩.
- 调查结果澄清了自旋电子设备中SOT和OT的机遇和挑战.
关键词:
磁还原性随机访问存储器 磁还原性随机访问存储器轨道上的霍尔效应.轨道扭矩是指轨道扭矩.轨道电子公司的轨道电子.旋转的霍尔效应旋转轨道扭矩扭矩旋转电子技术 (spintronics) 是一个技术.更多相关视频
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