相关实验视频
Updated: Jun 9, 2025
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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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基于SiC基板的GaN光导半导体交换机的性能调查和损坏分析
Jiankai Xu1,2,3, Lijuan Jiang1,2,3, Ping Cai1,2,3
1Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Micromachines
|October 26, 2024
概括
本研究介绍了一种高功率的化 (GaN) 光导半导体开关 (PCSS),可以实现高峰电流. 研究还分析了设备本身.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 化 (GaN) 光导半导体开关 (PCSSs) 对于高功率应用至关重要,因为它们的泄漏率低,状态电流高.
- 这些设备对于快速切换和高功率电磁脉冲 (EMP) 设备至关重要.
研究的目的:
- 为了演示一个高功率的GaN横向PCSS设备.
- 通过保留AlGaN/GaN异构结构来增强输出峰值电流的方法.
- 分析PCSS在高电场和激发激光能量下的损伤机制.
主要方法:
- 高功率的GaN侧向PCSS的制造和测试.
- 内在触发PCSS以测量输出峰值电流和输入电压.
- 通过材料分解和导电路径形成来分析设备的损伤机制.
主要成果:
- 使用内在触发实现了142.2A的输出峰值电流,输入电压为10.28kV.
- 保持电极之间的AlGaN/GaN异构结构显著增加了输出峰值电流.
- 设备故障归因于来自大电流的高热引起的GaN分解,形成金属Ga导电路径.
结论:
- 开发的高功率GaN侧向PCSS显示了显著的电流处理能力.
- 拟议的方法通过优化异构结构集成,有效地提高PCSS性能.
- 了解故障机制对于提高GaN PCSS在苛刻应用中的可靠性和寿命至关重要.
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