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关于FinFET技术的全面审查:历史,结构,挑战,创新和新兴传感应用

Koosha Karimi¹, Ali Fardoost¹, Mehdi Javanmard¹

¹Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, New Brunswick, NJ 08854, USA.

|October 26, 2024

概括

本综述探讨了FinFETs,3D MOSFETs,它们提供了超越平面CMOS的功率/性能优势和可扩展性. 它涵盖了制造,材料,挑战以及新兴的基于FinFET的传感器应用.

科学领域:

半导体设备物理半导体设备物理
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

对于先进晶体管的日益增长的需求推动了对3D金属氧化物半导体场效应晶体管 (MOSFET) 的探索.
由于增强的静电控制和可扩展性,FinFETs成为批量互补金属氧化物半导体 (CMOS) 技术的优越替代品.
解决短通道效应和泄漏电流对于下一代集成电路至关重要.

研究的目的:

提供FinFET技术的全面审查,包括制造,材料和应用.
在纳米级CMOS的背景下分析与FinFETs相关的优势和挑战.
为了突出基于FinFET的传感技术的最新进展.

主要方法:

审查关于FinFET制造工艺和材料创新的现有文献.
对有关FinFET功能,泄漏电流和静电特征的模拟数据的分析.
探索各种FinFET结构及其性能影响.

主要成果:

与平面CMOS相比,FinFET表现出显著的功率和性能优势,提高了可扩展性,并更好地控制了短通道效应.
模拟提供了关于管理非电流问题的见解,特别是在狭窄带隙材料中.
已经开发了使用不同材料的各种FinFET结构和制造技术.

结论:

FinFETs代表了超越平面CMOS限制的关键技术,使新的设备架构成为可能.
诸如角形效应,量子效应和布局依赖等挑战需要持续的研究和缓解策略.
FinFET显示出先进应用的有前途潜力,特别是在传感器技术领域.

关键词:

金融资产负债表 (FinFETs) 是一种金融资产负债表.气体传感器气体传感器离子传感器离子传感器温度传感器是一种温度传感器.生物传感器生物传感器设备性能指标设备性能指标制造材料的制造材料是什么高k介电介电材料的使用多门技术的多门技术.感应pH 感应pH 感应pH 短通道效应 (SCE) 是一种短通道效应.

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