相关实验视频

Updated: Jun 9, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

通过超薄的AlN后壁层改善了基于GaN的双通道HEMT的直流和射频特性

Qian Yu¹, Chunzhou Shi¹, Ling Yang¹

¹State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

|October 26, 2024

概括

高电子移动性晶体管 (GaN HEMT) 显示出优越的性能,而不是亚 (InAlN) 亚屏障HEMT. AlN结构表现出更高的输出电流,故障电压和用于先进电子的功率效率.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电气工程电气工程

背景情况:

双通道化高电子流动性晶体管 (GaN HEMT) 需要优化结构,以改善脱状态和分解特性.
超薄屏障层,特别是化 (AlN) 和化 (InAlN) 副屏障,正在作为提高设备性能的潜在候选人进行研究.

研究的目的:

为了比较AlGaN/GaN/AlN/GaN (亚-AlN) HEMT和AlGaN/GaN/InAlN/GaN (亚-InAlN) HEMT的性能.
确定更适合的子屏障层,以改善双通道GaN HEMT的离位和分解特性.

主要方法:

两个类型的HEMT的制造和表征:亚AlN和亚InAlN结构.
传输电子显微镜 (TEM) 分析用于研究材料特性.
电气性能测试,包括输出电流密度,传导性,故障电压,电流增强切断频率 (fT),最大振荡频率 (fmax),功率增加效率 (PAE) 和输出功率密度 (Pout).

主要成果:

TEM成像揭示了InAlN屏障中的印分离,对第二通道的移动性产生了负面影响.
与sub-InAlN HEMT相比,sub-AlN HEMT显示出更高的输出电流密度 (11.3 W/mm) 和透导率.
亚-AlN HEMT 实现了比亚-InAlN HEMT (121 V) 更高的故障电压 (294 V),归因于AlN层屏蔽漏电流. 较高的FT,fmax,PAE (57%) 和Paut也在亚ALN HEMT中观察到.

结论:

由于其优越的材料质量和设备性能,AlN子屏障是双通道GaN HEMT更合适的选择.
与其亚InAlN对应器相比,亚AlNHEMT提供了增强的输出特性,故障电压,频率响应和功率效率.
这些发现凸显了亚网结构在高功率和高频应用中的潜力.

关键词:

在 AlN 屏障上.获得了他的家.在AlN屏障中.这是一个双通道的双通道.无线电频率无线电频率的使用情况.超薄的屏障层是一种超薄的屏障层.

更多相关视频

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

相关概念视频

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...