一个紧的V频段温度补偿低噪声放大器在一个130纳米的SiGe BiCMOS工艺
Yi Shen1, Jiang Luo1, Wei Zhao1
1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.
Micromachines
|October 26, 2024
概括
这项研究介绍了一种紧的V频段低噪声放大器 (LNA),具有先进的温度补偿. 开发的LNA在广泛的温度范围内表现出稳定的性能,使其适合苛刻的应用.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 半导体设备物理 半导体设备物理
背景情况:
- 低噪音放大器 (LNA) 是射频 (RF) 系统中的关键组件,在不同的环境条件下需要稳定的性能.
- 温度变化可以显著降低LNA性能,影响增益,噪声数字和线性.
- 现有的LNA通常难以在广泛的操作温度范围内保持一致的性能,因此需要强大的热管理解决方案.
研究的目的:
- 设计和实施一个紧的V频段低噪声放大器 (LNA),增强温度稳定性.
- 通过创新的电路设计技术,扩大LNA的运行带宽.
- 为了评估LNA的性能特征,包括收益,噪声数字和功耗,在广泛的温度谱中.
主要方法:
- 实施130nm SiGe BiCMOS工艺用于LNA制造.
- 利用负温度系数 (NTC) 偏差电路用于自适应电流生成和温度补偿.
- 采用T型感应网络来创建两个主导极,以提高带宽.
主要成果:
- 该LNA原型在40-65GHz频段和-55°C至85°C温度范围内实现了不到1.5dB的增强变化.
- 测量的峰值增益在-55°C时为25.5dB,在25°C时为25dB,在85°C时为24.4dB.
- 最低噪声值 (NF) 从3.0dB到4.2dB不等,直流功耗在22.3mW和34.4mW之间,紧的面积为0.37mm2.
结论:
- 开发的V频段LNA显示出出色的温度稳定性和宽带宽,这归因于集成温度补偿电路和T型感应网络.
- 紧的设计和强大的性能使得这种LNA适用于各种V频段应用,需要在各种热条件下可靠运行.
- 这项工作为下一代在具有挑战性的环境中运行的射频和通信系统提供了高度稳定和高效的LNA解决方案.
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