道磁阻微磁传感器通过参考磁场的温度补偿方法
Tao Kuai1,2, Qingfa Du1, Jiafei Hu1
1College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
Micromachines
|October 26, 2024
概括
本研究提出了一种新方法,以减少道磁阻传感器 (TMR) 中的温度漂移. 该技术可以提高测量精度和传感器可重复性,而不需要温度传感器.
科学领域:
- 传感器技术 传感器技术
- 材料科学 材料科学 材料科学
- 物理 物理学 物理
背景情况:
- 道磁阻 (TMR) 传感器遭受了显著的温度漂移和糟糕的重复性,限制了测量准确性.
- 现有的温度补偿方法缺乏精度,实时能力,无法有效解决可重复性问题.
研究的目的:
- 引入一种用于抑制TMR传感器温度偏移的新方法.
- 为了提高TMR传感器温度补偿的实时性能和可重复性.
主要方法:
- 一个交替的参考磁场应用于TMR传感器.
- 在参考磁场频率的输出振幅计算为实时灵敏度偏移补偿.
- 温度特征测试是在受控的非磁性温度测试室中进行的.
主要成果:
- TMR灵敏度漂移系数从985.39 ppm/°C降低到59.08 ppm/°C. 这一变化使得TMR灵敏度漂移系数从985.39 ppm/°C降低到59.08 ppm/°C.
- 灵敏度温度特征曲线的可重复性得到改善,根平均平方误差从0.84降至0.21.
- 在没有温度传感器的情况下实现有效的温度漂移缓解.
结论:
- 拟议的方法为TMR传感器中高精度温度漂移抑制提供了一种新的方法.
- 该技术提供实时性能和增强的可重复性,克服了传统方法的局限性.
- 这一进步使TMR传感器能够在不同温度下进行更准确的测量.
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