重置电压控制电阻状态和无成形铁合 SrTiO 的应用3薄膜记忆器
Ke-Jing Lee1, Cheng-Hua Wu2, Cheng-Jung Lee2
1Center for Environmental Toxin and Emerging-Contaminant Research & Technology Center, Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 83347, Taiwan.
Materials (Basel, Switzerland)
|October 26, 2024
概括
铁酸 (STF) 薄膜显示了对电阻随机存储器 (RRAM) 应用程序的改进的电阻切换特性. 这些基于STF的RRAM设备与传统的酸 (STO) RRAM相比,具有较低的操作电压和更高的稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 电气工程 电气工程
背景情况:
- 电阻随机访问存储器 (RRAM) 是一个有前途的非易失性存储器技术.
- 基于酸 (STO) 的RRAM设备在工作电压和稳定性方面存在局限性.
- 提高RRAM设备的性能对于下一代电子产品至关重要.
研究的目的:
- 为了研究铁酸 (STF) 薄膜在RRAM应用中的潜力.
- 为了比较STF RRAM与传统STO RRAM的电阻开关特性.
- 了解铁 (Fe) 兴奋剂对基于STF的RRAM设备性能的影响.
主要方法:
- 使用sol-gel工艺制造STF薄膜的制造.
- /STF/ITO/玻璃RRAM设备的制造和特征.
- 分析电阻开关行为,包括设置/重置电压和设备稳定性.
- 研究Fe对导电路径和双极电阻切换特性的影响.
主要成果:
- 与STO RRAM (-1.4 V/+3.3 V) 相比,STF RRAM设备显示了明显改善的设置/重置电压 (-0.45 V/+1.55 V).
- 在Al/STF/ITO/Glass RRAM中,显示的内存窗口超过10^3.3.
- 设备显示低工作电压和显著的稳定性,持续超过10^4秒.
结论:
- 与铁酸 (STO) 相比,铁酸 (STF) 是用于RRAM应用的优质材料.
- 在STF薄膜中加入Fe可增强电阻切换特性和设备稳定性.
- 基于STF的RRAM为开发先进的内存技术提供了一个有前途的途径.
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