在二维半导体中增强旋转霍尔比率
Jiaqi Zhou1, Samuel Poncé2,3, Jean-Christophe Charlier1
1Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain (UCLouvain), Chemin des Étoiles 8, B-1348 Louvain-la-Neuve, Belgium.
概括
研究人员使用ab initio计算评估了III-V单层的旋转霍尔比率 (SHR). 孔合的GaAs单层表现出0.58的超高SHR,表明有效的电荷到旋转电流转换.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 计算材料科学科学 计算材料科学
背景情况:
- 旋转霍尔效应 (SHE) 促进电荷电流转化为旋转电流.
- 旋转霍尔比率 (SHR) 量化了这种转换效率.
- 探索具有高SHR的新型2D材料对于旋转电子应用至关重要.
研究的目的:
- 计算和报告III-V单层半导体的旋转霍尔比率 (SHR).
- 提出一种描述符,用于识别具有高SHR的2D材料.
- 用2D材料的高通量选来验证描述符.
主要方法:
- 最先进的 ab initio 电荷导电性和自旋霍尔导电性的计算.
- 为发现高SHR材料开发和应用描述器.
- 一个数据库的高通量选,该数据库包含216个可剥离的单层半导体.
主要成果:
- 在孔合的GaAs单层中发现了0.58的超高旋转霍尔比 (SHR).
- 提出并验证了高SHR材料的新型描述符.
- 确定了MXene单层Sc2CCl2作为高SHR的有希望的候选者.
结论:
- 穿孔合的GaAs单层显示出高效旋转电流生成的特殊潜力.
- 开发的描述符有效地预测了高SHR材料.
- 这项研究为发现新的2D材料提供了一条途径.
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