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Updated: Jun 9, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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二维ZrS2和HfS2用于制造10nm以下高性能P型晶体管

Xuemin Hu1,2, Yu Huang3, Hengze Qu2

  • 1School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China.

The journal of physical chemistry letters
|October 28, 2024
PubMed
概括

新的二维 (2D) 过渡金属二甲基化物 (TMDC) 半导体ZrS2和HfS2显示出对高性能P型场效应晶体管 (FET) 的前景. 这些材料使先进的10nm以下的补充金属氧化物半导体 (CMOS) 集成电路成为可能.

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