高性能和几乎没有唤醒的Hf0.5Zr0.5O2铁电容器通过中间层策略实现,具有BEOL兼容性
Yin-Chi Liu1,2, Gen-Ran Xie2, Ji-Ning Yang2
1Shaoxin Laboratory, Shaoxing, Zhejiang 312000, People's Republic of China.
Nanotechnology
|October 28, 2024
概括
研究人员使用中层 (ML) 策略优化了铁电电容器. 一个ZrO2 ML显著提高了Hf0.5Zr0.5O2 (HZO) 薄膜中的铁电和可靠性,同时最大限度地减少了唤醒效应.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 氧化 (Hf0.5Zr0.5O2或HZO) 是一个有前途的铁电材料,因为它的可扩展性和CMOS兼容性.
- 优化HZO膜对于降低先进电子设备的热预算和功耗至关重要.
- 铁电电容器的唤醒效应需要提高稳定性和性能的策略.
研究的目的:
- 为了提高基于HZO的电容器的铁电特性和可靠性.
- 为了抑制低运行电场下的铁电电容器的唤醒效应.
- 调查不同中间层 (MLs) 对HZO薄膜性能对后端应用的影响.
主要方法:
- 集成ZrO2,HfO2和Al2O3作为HZO膜中的中间层.
- 包含这些MLs的铁电容器的制造和表征.
- 在不同电场下评估铁电性能 (例如,残留极化) 和唤醒效应.
主要成果:
- 带有ZrO2 ML的HZO电容器在2 MV cm-1.1时表现出高双残余极化 (2Pr) 的41.7 μC cm-2.
- 在2 MV cm-1和3 MV cm-1分别观察到约0.08和0.05的超低唤醒比率.
- 该ZrO2 ML电容器表现出卓越的可靠性,在4.3 × 109周期后保持40.7μC cm−2.
结论:
- 中层工程策略有效地提高了基于HZO的铁电容器的铁电和可靠性.
- 在保持高性能的同时,ZrO2 ML特别有效地抑制了唤醒效应.
- 这种方法为优化基于HfO2的铁电材料的可行途径提供了一个可行的途径,用于要求高的应用.
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