基于铁的涂层导体的低成本架构
L Piperno1,2, A Vannozzi1, F Rizzo1
1ENEA, Frascati Research Centre, Via E. Fermi, 45, 00044 Frascati, Italy.
iScience
|October 30, 2024
概括
简化铁基涂层导体 (IBS-CC) 是使用单一的化学缓冲层开发的. 这种方法使得具有有希望的临界电流密度的超导膜的低成本生产成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 超导电性 超导电性 超导电性
背景情况:
- 传统的铁基涂层导体 (IBS-CC) 通常需要复杂的多层架构.
- 对IBS-CC材料的温和模板晶体质量要求允许简化设计.
- 一个单一的缓冲层可能足以保护和导向超导膜的生长.
研究的目的:
- 调查使用单一缓冲层简化IBS-CC架构的可行性.
- 准备和描述在化学沉积的缓冲层上生长的铁基超导薄膜.
- 分析这些简化IBS-CCs的当前运输特性.
主要方法:
- 脉冲激光沉积 (PLD) 用于生长Fe (Se,Te) 薄膜.
- 在商业磁带上使用了一个单一的,化学沉积的基于CeO2的缓冲层.
- 描述包括对缓冲层的分析和对Fe (Se,Te) 电流运输特性的详细研究.
主要成果:
- 观察到超导过渡的临界温度 (T) 约为12 K.
- 临界电流密度 (J) 达到大约0.1 MA cm-2在4.2 K和零磁场.
- 基于CeO2的缓冲层有效地促进了超导膜的定向增长.
结论:
- 使用单个化学缓冲层实现简化的IBS-CC设计是可以实现的.
- 这种方法为低成本生产高性能超导磁带提供了一条途径.
- 开发的Fe(Se,Te) 薄膜表现出有前途的超导特性,适合各种应用.
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