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Updated: Jun 9, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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在MoS2中探索旋转多重性

Sudipta Khamrui1, Kamini Bharti1, Daniella Goldfarb2

  • 1Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India. tilak.das@phy.iitkgp.ac.in.

Nanoscale
|October 30, 2024
PubMed
概括

研究人员在二硫化 (MoS2) 纳米晶体中发现了高旋转的Mo3+和Mo2+中心,挑战了之前的发现. 这项工作通过了解缺陷诱导的自旋中心,推进了自旋电子学和量子技术.

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