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从下到上 Cu 填充环形通过介质:微观结构和纹理

Sang-Hyeok Kim¹, Hyo-Jong Lee¹, Daniel Josell²

¹Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, South Korea.

Electrochimica acta

|October 31, 2024

概括

通过通道 (TSV) 的铜 (Cu) 填充涉及两个阶段:最初的侧墙沉积和随后的自下而上填充. 波洛胺和离子影响Cu粒的质地和沉积位置,优化TSV填充.

科学领域:

电化学电化学电化学
材料科学材料科学材料科学
半导体制造业半导体制造业

背景情况:

透过通道 (TSV) 对3D集成电路至关重要.
在电化学沉积过程中控制微结构对于TSV填充至关重要.
了解波洛胺和离子等添加剂的作用是关键.

研究的目的:

调查环状TSV的自下而上的Cu填充过程中的微观结构和形态演变.
为了确定电解质成分 (CuSO4-H2SO4-Cl-poloxamine) 对沉积阶段和颗粒质感的影响.
为了阐明在TSV中Cu沉积和被动化的机制.

主要方法:

铜在环状TSV中的电化学沉积.
使用显微镜技术分析微观结构和形态变化.
沉积行为与电解质组成和添加剂度的相关性.

主要成果:

沉积发生在两个阶段:最初的侧墙沉积,然后是自下而上的填充.
波洛克萨明度影响侧壁沉积深度和向下向上填充的过渡.
外侧墙壁和底面呈现出优选的晶体纹理 (111//ND和110//CD).
底部向上填充是由110//ND纹理的粒度主导的,受离子的影响.
聚合物抑制剂在自下而上的生长过程中不会在活性沉积表面上吸附.

结论:

该研究揭示了TSV的自下而上的Cu填充的不同阶段,由电解质添加剂控制.
晶体结构的发展受到TSV几何和电解质化学 (Cl-) 的影响.
优化的添加剂度可以促进高效的自下而上的填充,以达到先进包装所需的粒度纹理.

关键词:

这是自下而上的填充.铜铜铜铜铜铜结晶学质地结晶学质地欧洲银行股票监督管理局 (EBSDD) 的工作.微观结构的微观结构在TSVV中,

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