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在InGaAs的倒置层移动性和接口陷密度从有门的大厅测量

T Chidambaram¹, D Veksler², S Madisetti¹

¹SUNY Polytechnic Institute, Albany, NY 12203, USA.

IEEE electron device letters : a publication of the IEEE Electron Devices Society

|October 31, 2024

概括

封闭式霍尔法准确地测量了InGaAs MOSFET中的自由载体密度和电子流动性. 这种技术揭示了C-V方法的显著低估,并突出了边界陷对电子传输的影响.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学

背景情况:

甲 (InGaAs) 金属氧化物半导体场效应晶体管 (MOSFET) 对于高速电子设备至关重要.
准确地描述载体运输特性和接口质量对于设备优化至关重要.
传统的电容-电压 (C-V) 方法经常高估通道载波密度,导致不准确的移动性估计.

研究的目的:

使用封闭式Hall方法直接测量InGaAs MOSFET通道中的自由载体密度和电子流动性.
为了比较封闭式Hall方法的准确性与晶体管特性和C-V测量.
调查接口陷,包括边境陷,在InGaAs MOSFET中对载体运输的影响.

主要方法:

通过封闭式霍尔法直接测量自由载体密度和电子流动性.
分析取决于温度的电子流动性,以确定散射机制.
使用封闭式大厅技术分离自由载体和被困电荷,以可靠地估计界面陷密度.

主要成果:

在室温下电子密度约为1×1012 cm−2时观察到的最高霍尔运动率为1800 cm2/Vs.
由于过高估计的通道密度,C-V测量显著低估了移动性.
远程库伦散射被确定为在电子密度低于3×1011厘米-2.2的电子密度的主导机制.
在III-V/高k接口上对接口陷密度 (包括边界陷) 的可靠估计.

结论:

封闭式Hall方法提供了InGaAs MOSFET中载波密度和移动性的准确测量,超过了C-V方法.
传导带上方的快速边界陷显著影响InGaAs通道,捕获多达一半的通道电子.
这些被困电荷增加了切换能量和功率消耗,与 (Si) 设备不同,边界陷效应可以忽略不计.

关键词:

III-V MOSFETs 的使用情况.载体密度载体密度载体密度接口状态表示接口状态.移动性是一种流动性.散射机制是一种分散机制.

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