现场回火对MnN/CoFeB交换偏差系统的影响
P Quarterman1, I Hallsteinsen2,3, M Dunz4
1NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
概括
扩散影响在MnN/CoFeB异构结构中的交换偏差. 高温会增加厚薄膜的偏差,但由于的迁移,导致薄膜的缺陷和偏差损失.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 交换偏差对于自旋电子设备至关重要.
- 了解异构结构中的界面效应是设备性能的关键.
- 在磁性异构结构中的作用是一个活跃的研究领域.
研究的目的:
- 为了研究扩散对MnN/CoFeB异构结构的交换偏差的影响.
- 为了确定MnN厚度和回火温度对迁移和交换偏差的影响.
- 阐明交换偏差增强和损失背后的机制.
主要方法:
- 制造具有不同MnN厚度的MnN/CoFeB异构结构.
- 在不同温度下进行场化.
- 极化中子反射计 (PNR) 用于研究磁性深度配置文件.
- 磁性X射线光谱 (XAS) 用于分析元素和化学状态.
主要成果:
- 高温回火增强了更厚的MnN薄膜的交换偏差,这是由于改善了晶度.
- 气从MnN迁移到Ta种子层,随着火温度的增加.
- 薄薄的MnN薄膜在高温下由于缺乏而失去交换偏差,从而改变了反铁磁状态.
- 在MnN/CoFeB接口发生混合,这与缺乏和空缺有关.
结论:
- 的迁移和由此产生的缺陷是控制MnN/CoFeB异构结构中的交换偏差的关键因素.
- 优化MnN厚度和化条件对于最大化交换偏差至关重要.
- 这些发现提供了关于薄膜异构结构中界面磁性控制的基本机制的见解.
更多相关视频
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.0K
11:44Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
10.3K
相关概念视频
Biasing of Metal-Semiconductor Junctions
215
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
215
Biasing of FET
218
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
218
Biasing of P-N Junction
431
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
431
π Electron Effects on Chemical Shift: Overview
1.1K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.1K
Atomic Nuclei: Nuclear Relaxation Processes
631
In the absence of an external magnetic field, nuclear spin states are degenerate and randomly oriented. When a magnetic field is applied, the spins begin to precess and orient themselves along (lower energy) or against (higher energy) the direction of the field. At equilibrium, a slight excess population of spins exists in the lower energy state. Because the direction of the magnetic field is fixed as the z-axis, the precessing magnetic moments are randomly oriented around the z-axis.
631
Ferromagnetism
2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
