相关实验视频

Updated: Jul 2, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.4K

范德瓦尔斯GeSe具有可穿戴电子产品的应变和门调节线性二元体

Yangjun Gao1, Chenhao Zhang1, Liangjie Zhao1

  • 1Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)
|October 31, 2024
PubMed
概括

研究人员通过调整电子和结构性质,通过使用化 (GeSe) 光探测器调整光极化探测. 这一进步显示了可穿戴电子产品的前景,通过门电压和应变增强了二元化比率.

关键词:
门电压调节规则 门电压调节规则德化的化.一个线性二重化.应变工程是一种应变工程.可穿戴设备可穿戴设备.

更多相关视频

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K
Production of a Strain-Measuring Device with an Improved 3D Printer06:17

Production of a Strain-Measuring Device with an Improved 3D Printer

Published on: January 30, 2020

6.1K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...