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基于二维铁磁金属的全合一磁光记忆阵列

Qinghua Hao¹, Menghao Cai¹, Hongwei Dai²

¹Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.

ACS applied materials & interfaces

|October 31, 2024

概括

研究人员使用铁-- Telluride (Fe3GeTe2) 片开发了高效的磁光记忆阵列. 这些设备利用旋转轨道扭矩来实现高密度,高能效的无重金属的旋转电子应用.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

二维 (2D) 范德瓦尔斯 (vdW) 磁性材料由于其原子厚度和光滑的接口,为高密度,高能效的自旋电子设备提供了潜力.
控制垂直磁性异构性 (PMA) 和在2D vdW铁磁材料中集成多个内存细胞仍然是重大挑战.

研究的目的:

通过使用2D vdW铁磁材料来演示高效的磁光内存阵列.
探索使用旋转轨道扭矩 (SOT) 在没有重金属辅助的情况下用于内存应用.
为了研究Fe3GeTe2 (FGT) 纳米片的电流控制的切换行为.

主要方法:

使用单个Fe3GeTe2 (FGT) 片制造磁光记忆阵列.
利用平面内电流来诱导大旋转轨道扭矩 (SOT) 进行内存操作.
非挥发性三位内存数组和挥发性切换行为的特征.

主要成果:

证明了基于FGT片的高效磁光内存阵列,不需要重金属.
实现了低电流密度的操作,用于内存写入和读取.
实现了具有可重复清洗功能的非挥发性三位内存阵列.
在零磁场下观察到FGT纳米片中电流控制的挥发性切换行为.

结论:

开发的基于FGT的磁光内存阵列为下一代自旋电子设备提供了有前途的解决方案.
这项工作为可扩展的,高性能的旋转式逻辑设备和基于全视频材料的SOT磁性随机访问存储器 (MRAM) 铺平了道路.

关键词:

磁光学记忆阵列磁光学记忆阵列垂直的磁性异构性是垂直的旋转电子技术 (spintronics) 是一个旋转-轨道扭矩这是一个二维的范德瓦尔斯磁铁.

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