紫外线回火对SnO pFET中孔有效移动性的影响
Shi-Hao Zeng1, Pheiroijam Pooja1, Jiancheng Wu1
1Electronics Engineering Institute, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.
Scientific reports
|November 1, 2024
概括
紫外线 (UV) 化显著提高了纳米板 SnO pFET 中的孔有效移动性 (μeff),实现了 3D CMOS 逻辑的创纪录性能. 这一工艺增强了用于低功耗,高密度应用的氧化物半导体设备.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术 纳米技术
背景情况:
- 氧化物半导体pFET对于低功耗,高密度的3D CMOS逻辑至关重要.
- 在高孔密度 (Qh) 中实现高孔有效移动性 (μeff) 对这些应用至关重要.
- 与先进材料相比,当前的技术在表面粗性,均性和粒度边界方面存在局限性.
研究的目的:
- 研究紫外线 (UV) 化对纳米板SnO pFET性能的影响.
- 在氧化物半导体pFET中实现记录μeff,用于单体3DCMOS.
- 了解负责绩效提升的潜在机制.
主要方法:
- 使用HfO2/SiO2门介电器制造纳米板SnO pFET.
- 在制造的设备上应用紫外线回火.
- 设备性能的表征,包括μeff,Qh和开/关电流 (ION/IOFF) 的比率.
- 使用X射线光电子谱学 (XPS) 分析材料特性.
主要成果:
- 紫外线制的SnO pFET显示显著增强了μeff,在5 × 1012 cm-2 Qh时达到13.38 cm2/V-s,这与非制设备 (9.03 cm2/V-s) 相比是显著的改善.
- 在高Qh的氧化物半导体pFET中,获得了最高的μeff,适用于低功耗的3D CMOS逻辑.
- 测量出了1.05×105的优异的ION/IOFF比,归因于超薄的8nm SnO纳米板通道.
- XPS分析显示,紫外线辐射增加了Sn2+和减少了Sn0,导致48%的效果改善.
结论:
- 紫外线回火是一种高效的低热预算工艺,可提高SnO pFET的性能.
- 改进的μeff,高的ION/IOFF比率,以及优良的表面性能使得UV化SnO pFET成为单立体3DCMOS的一个有希望的技术.
- 这一进步克服了传统聚Si的局限性,并使下一代集成电路成为可能.
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