Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

215
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
215

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

A stage-based framework to interpret regulatory T cell biology after heart transplantation.

Frontiers in cardiovascular medicine·2026
Same author

Passive OPM-MEG paradigm reveals altered brain network organization in children with DLD.

iScience·2026
Same author

Inhibition of voltage-dependent anion channel 1 aggregation protects pancreatic beta-cell mitochondria from glucose toxicity.

International journal of biological macromolecules·2026
Same author

Synergistic Regulation of Osteogenesis and Angiogenesis on Titanium Implants via Laser-Etched Micronano Structures and Zinc Oxide Coatings.

ACS applied bio materials·2026
Same author

Editorial: The role of inflammasome in neuroinflammation and neurodegeneration.

Frontiers in immunology·2026
Same author

Therapeutic effect of Fast Fix suture device combined with suture hook for lateral meniscus tear repair.

BMC surgery·2025

相关实验视频

Updated: Jun 8, 2025

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.2K

芯片上集成的偏振光束分离器基于元波导.

Yuqing Song, Xixi Chu, Rongquan Chen

    Optics letters
    |November 1, 2024
    PubMed
    概括

    这项研究介绍了一种紧的纳米天线和波导结构,以有效地将自由空间光转化为引导波. 这一突破使得芯片上的极化复杂化和波长路由能够用于先进的光子集成电路.

    科学领域:

    • 光子学是指光子学的使用方法.
    • 纳米技术纳米技术
    • 光电学是指光电子产品.

    背景情况:

    • 超表面研究往往侧重于自由空间波动操纵,导致设备大小.
    • 超表面在将自由空间光转换为引导波方面存在显著的潜力.

    研究的目的:

    • 提出和演示一个紧的装置,用于将线性极化光转换为引导波.
    • 为了实现光线在芯片上的高效合,分裂和波长路由.

    主要方法:

    • 集成纳米天线与波导.
    • 设计一个紧的结构,用于光的操纵.
    • 合效率,定向性和传输速率的表征.

    主要成果:

    • 在任何角度有效合和分裂线性偏光.
    • 证明了波长路由功能,其定向性高达23.74dB.
    • 实现了12.5%的最大传输率.

    结论:

    • 纳米天线-波导集成使得芯片上的极化复杂化具有高效率.
    • 拟议的设备为光子集成电路提供了新的可能性,包括模式转换.

    更多相关视频

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.4K
    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.0K

    相关实验视频

    Last Updated: Jun 8, 2025

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
    09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.2K
    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.4K
    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.0K