概括
量子井点激光器显示纯基态激光到8A,不像量子井激光器更早切换到激发状态激光. 这种差异与InGaAs/GaAs设备的波导设计和模态增益有关.
科学领域:
- 半导体物理 半导体物理
- 光电学是指光电子产品.
- 材料科学 是一种材料科学.
背景情况:
- 广域半导体激光器对于各种应用至关重要.
- 了解电流控制的激光动态是优化激光性能的关键.
- 量子井点 (QWD) 和量子井 (QW) 结构提供不同的载体封闭特性.
研究的目的:
- 在InGaAs/GaAs QWD和QW激光器中,研究电流控制激光从基态 (GS) 切换到激发状态 (ES).
- 为了比较QWD和QW激光器的激光行为,使用不同的波导设计.
- 确定影响ES激光出现的因素.
主要方法:
- 制造和描述具有不同波导厚度 (0.45微米和0.78微米) 的广域InGaAs/GaAs QWD和QW激光器.
- 在不同的注入电流下对激光特性的实验测量.
- 波导设计和模态增益对GS和ES激光过渡的影响分析.
主要成果:
- 在QWD激光器中,纯GS激光保持至8A,使用0.45微米波导.
- 早在3A时就在类似设计的QW激光器中观察到ES激光.
- 在QWD激光器中,ES激光只发生在0.78μm波导支持第二顺序横向模式时.
- 通过使用两个QWD层来增加模态增益,在0.78μm波导装置中抑制了ES激光.
结论:
- 由于其独特的结构,QWD激光器与QW激光器相比,具有优越的GS激光稳定性.
- 波导设计和横向模式支持在ES激光发射中起着至关重要的作用.
- 优化模态增益和波导结构可以有效地抑制InGaAs/GaAs激光器中不需要的ES激光.
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