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Updated: Jun 8, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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压力依赖的MoS2的形状和边缘配置由动力蒙特卡洛模拟

Yoonbeen Kang1, Rakwoo Chang2, Sang-Yong Ju1

  • 1Department of Chemistry, Yonsei University, Seodaemun-Gu, Seoul 03722, Republic of Korea.

ACS nano
|November 1, 2024
PubMed
概括

通过化学蒸汽沉积 (CVD) 来优化二硫化物 (MoS) 的生长,需要控制前体压力. 动力蒙特卡洛模拟揭示了影响MoS2边缘结构的独特生长模式,用于定制的应用.

关键词:
蚀刻 蚀刻 蚀刻 是一种方法.增长的增长增长的增长增长的增长.动力蒙特卡洛模拟模型压力 压力 压力 压力 压力稳定状态的稳定状态过渡金属二甲基二甲基化物

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