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Updated: Jun 8, 2025

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大型单向旋转霍尔磁电阻在FeNi/Pt/Bi2Se3三层由Pt接口工程

Qi Zhang¹, Kun Tao¹, Chenglong Jia¹

¹Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, PR China.

Nature communications

|November 2, 2024

概括

研究人员在新型FeNi/Pt/Bi2Se3设备中实现了显著的单向旋转霍尔磁阻 (USMR) 效应. 这一突破增强了spintronic内存潜力,并提高了室温性能.

科学领域:

这就是Spintronics.
凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学

背景情况:

单向旋转霍尔磁电阻 (USMR) 对于磁电阻随机访问存储器 (MRAM) 是至关重要的.
由于局限的室温效应,在USMR设备中实现高信号噪声比是具有挑战性的.
接口工程是提高USMR性能的关键.

研究的目的:

设计FeNi/Pt/Bi2Se3三层,以获得较大的USMR效果.
为了优化旋转电流传输和在接口上的电子-磁子散射.
为了证明USMR-MRAM设备在室温及以上的强大性能.

主要方法:

制造FeNi/Pt/Bi2Se3三层的制造.
对USMR值的实验测量.
第一个原则计算,以了解接口效应.
两个终端设备对输出性能的表征.

主要成果:

在室温下实现了显著增强的USMR值30.6 ppm/MA/cm2.
Pt界面层保留了拓表面状态并产生了Rashba状态,提高了旋转轨道扭矩 (SOT) 的效率.
两端USMR-MRAM设备显示出强大的输出,第二波电阻变化约为0.11 Ω/mA.
在高温下,设备的性能得到了改善.

结论:

使用Pt的接口工程在实现大型USMR效果方面是有效的.
开发的USMR-MRAM设备显示出有希望的高性能和节能的旋转式存储器应用.
在高温下性能提升意味着在各种条件下可靠运行.

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