在高压下,半导体GeSe的相位过渡和金属化
1School of Science, Wuhan University of Technology, Wuhan 430070, People's Republic of China.
概括
化 (GeSe) 转化为33.5GPa以上的更高对称结构,在12GPa左右呈现半导体到金属的转变. 这项高压研究揭示了GeSeSe.
科学领域:
- 固态物理学和材料科学 固态物理学和材料科学
- 高压物理和材料表征的高压物理和材料表征.
- 半导体物理和设备应用
背景情况:
- 由于其独特的结构和物理特性,包括GeSe在内的IV-VI组单基化物具有重要的研究兴趣.
- 虽然GeS,SnS和SnSe表现出已知的高压相位过渡,但压力下的GeSe的行为一直受到争议.
- 对于光电子和热电应用,GeSe是有前途的,需要对其在不同条件下的性能进行彻底了解.
研究的目的:
- 在高压下系统地研究化 (GeSe) 的结构,光学和电气特性.
- 为了澄清GeSe.Se的高压相位过渡路径.
- 探索高压策略的潜力,以调整IV-VI单化物质的特性.
主要方法:
- 为了研究GeSe.Se的结构相变,进行了高压实验.
- 包括带隙在内的光学特性被测量为压力的函数.
- 分析了电气性能,以确定半导体到金属的过渡压力.
主要成果:
- 在33.5GPa时,GeSe从环境Pbnm结构转变为Cmcm结构.
- 随着压力增加,GeSe的光学带隙会减少.
- 从半导体到金属状态的过渡在高于12 GPa的压力下发生在GeSe中.
结论:
- GeSe的高压行为与其同等结构对应物 (GeS,SnS,SnSe) 的高压行为一致.
- 高压有效调节GeSe的结构,光学和电气特性.
- 这项研究提供了一种高压策略,以增强IV-VI组单质化物的光电子和热电潜力.
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