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Updated: Jun 8, 2025

Fabrication of Spatially Confined Complex Oxides
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通过溶液工艺制造的无氧化物MoS2薄膜的接口分析

Md Iftekharul Alam1, Rikiya Sumichika2, Junichi Tsuchimoto3

  • 1Research Institute for Semiconductor Engineering, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8530, Japan. iftekhar@hiroshima-u.ac.jp.

Scientific reports
|November 5, 2024
PubMed
概括

我们开发了一种无硫化溶液工艺,以制造高质量,无氧化二硫化物 (MoS) 薄膜. 这种方法提高了统一性,并为先进的电子设备应用提供了洞察力.

关键词:
接口分析 接口分析在MoS2中,MoS2就是MoS2.没有氧化物的表面.热溶解光谱学 热溶解光谱学过渡金属二甲基二甲基化物.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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