发现室温以上层次PbI2中的上转换光发光
Sharad Ambardar1, Xiaodong Yang2, Jie Gao3
1Department of Mechanical Engineering, Stony Brook University, Stony Brook, NY11794, USA.
Scientific reports
|November 6, 2024
概括
这项研究表明,化 (PbI2) 片中的上转换光发光. 这些发现揭示了范德瓦尔斯层状半导体中光子向上转换的温度依赖机制.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 固态物理 固态物理
背景情况:
- 范德瓦尔斯 (vdW) 层状材料,如化 (PbI2),由于它们的直接带隙和可见光发光,对光子和光电子设备具有前景.
- 了解光子上转换 (UPL) 机制对于先进的设备应用至关重要.
研究的目的:
- 为了研究和证明在脱皮的PbI2片中向上转换的光发光 (UPL).
- 在不同的激发条件下阐明温度依赖的UPL机制.
- 探索PbI2在温度控制的光子向上转换应用中的潜力.
主要方法:
- 在室温和高温下,在脱皮的PbI2片中实验证明UPL.
- 在532nm和561nm激发下对UPL发射功率依赖性的分析.
- 温度依赖的UPL排放测量,以揭示潜在的机制.
主要成果:
- 在不同温度下在PbI2片中证明了UPL.
- 在532nm激发下确定了一种涉及单光子的多声波辅助UPL过程.
- 观察到过渡到非线性UPL与561纳米激发,涉及多声波辅助和两光子吸收过程.
结论:
- 这项研究提供了对VDW分层半导体中的光子上转换机制的见解.
- 这些发现表明PbI2在温度控制的光子上转换,可调光子学,光检测和成像中具有潜力.
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