相关实验视频

Updated: Jun 8, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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探索MoSe2/WS2异构结构的多功能性

Tuan V Vu1,2, Dat D Vo1,2, Cuong Q Nguyen3,4

  • 1Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam. tuan.vu@vlu.edu.vn.

Dalton transactions (Cambridge, England : 2003)
|November 8, 2024
PubMed
概括

这项研究通过计算设计了MoSe2/WS2异构结构,揭示了其稳定性和可调节的电子特性. 电场和应变可以改变波段对齐和材料相位,突出了先进电子学的潜力.

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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