相关实验视频

Updated: Apr 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K

可控制的石墨烯/MoS2 异构接口通过垂直表面功能化

Qing Cao1, Jiajun Dai2, Zhuting Hao1

  • 1Institute of Chemistry and Biochemistry, Freie Universität Berlin, Altensteinstraße 23a, 14195, Berlin, Germany.

Angewandte Chemie (International ed. in English)
|November 8, 2024
PubMed
概括

我们通过修改石墨烯的功能群来设计石墨烯/二硫化物 (G/MoS2) 异构结构. 这种方法精确地控制层间距离和电荷传输,优化范德瓦尔斯异构特性.

关键词:
转移费用 转移费用 转移费用 转移费用密度函数计算 密度函数计算石墨烯/MoS2 异构结构.层间的距离是层间的距离.范德瓦尔斯的互动互动.

更多相关视频

Fabricating van der Waals Heterostructures with Precise Rotational Alignment09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K
Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry08:18

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

Published on: March 4, 2021

1.7K

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K