Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Reactivity and mechanistic insights into multistep silane functionalization of oxo-graphene.

Nanoscale·2026
Same author

Large Stokes shift fluorophores from <i>meta</i>-substituted zwitterions.

Chemical science·2026
Same author

Stabilizing the Hexacyanotrimethylenecyclopropane Electron Acceptor-Structural and Photophysical Characterization.

Angewandte Chemie (International ed. in English)·2026
Same author

Shikimic acid pathway drives the phase-dependent antibacterial activity of Bacillus amyloliquefaciens against Xanthomonas citri subsp. citri.

BMC microbiology·2026
Same author

Controlled Triazine-Based Covalent Functionalization of Black Phosphorus for Degradable Hybrid Materials.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

The role of nickel hydroxide phases in wastewater electrolysis for sustainable green hydrogen production.

Nanoscale·2026

相关实验视频

Updated: Apr 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K

可控制的石墨烯/MoS2 异构接口通过垂直表面功能化.

Qing Cao1, Jiajun Dai2, Zhuting Hao1

  • 1Institute of Chemistry and Biochemistry, Freie Universität Berlin, Altensteinstraße 23a, 14195, Berlin, Germany.

Angewandte Chemie (International ed. in English)
|November 8, 2024
PubMed
概括

我们通过修改石墨烯的功能群来设计石墨烯/二硫化物 (G/MoS2) 异构结构. 这种方法精确地控制层间距离和电荷传输,优化范德瓦尔斯异构特性.

关键词:
转移费用 转移费用 转移费用 转移费用密度函数计算 密度函数计算石墨烯/MoS2 异构结构.层间的距离是层间的距离.范德瓦尔斯的互动互动.

更多相关视频

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K
Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry
08:18

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

Published on: March 4, 2021

1.7K

相关实验视频

Last Updated: Apr 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K
Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry
08:18

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

Published on: March 4, 2021

1.7K

科学领域:

  • 材料科学 材料科学 材料科学
  • 表面化学 表面化学
  • 纳米技术 纳米技术

背景情况:

  • 表面化学和界面相互作用对于确定二维材料和异构结构的性质至关重要.
  • 对表面和接口的精确控制对于释放2D材料的全部潜力至关重要.

研究的目的:

  • 开发一种简单的方法来调整石墨烯/MoS2异构结构的接口距离和特性.
  • 研究功能组在石墨烯底层对G/MoS2异构结构的影响.

主要方法:

  • 用不同的化学组使石墨烯底层功能化.
  • 系统地分析这些功能组对层间距离,合和光学特性的影响.
  • 调查由功能组大小和电子特征影响的负载运输特性.

主要成果:

  • 功能组的尺寸和电子特性 (电子提取/捐赠) 显著调节电荷传输.
  • 功能组大小在调节这些属性方面发挥着特别重要的作用.
  • 在G/MoS2异构结构中,层间间距和合是通过接口工程有效调整的.

结论:

  • 接口化学工程为控制范德瓦尔斯异构结构中的层间距和电荷传输提供了一种高效和灵活的途径.
  • 这种方法突出了通过量身定制的界面设计优化基于二维材料的设备性能的潜力.