没有兴奋剂和电容器的1T-DRAM电池使用可重新配置的反机制
Yuna Suh1, Doohyeok Lim1,2
1Department of Nano Electronic Convergence Engineering, Kyonggi University, Suwon 16227, Gyeonggi-do, Republic of Korea.
Nanotechnology
|November 8, 2024
概括
这项研究引入了一种新型的无兴奋剂和无电容器的1T-DRAM电池,使用电荷等离子体和偏差诱导的静电兴奋剂 (bias-ED) 进行高级记忆应用.
科学领域:
- 固态物理 固态物理
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 传统的DRAM电池需要复杂的兴奋剂过程和集成电容器.
- 缩放限制和功耗是当前内存技术的关键挑战.
研究的目的:
- 提出并展示一种新的无兴奋剂和无电容器的1T-DRAM电池.
- 使用充电等离子体和偏差诱导的静电兴奋剂 (bias-ED) 实现虚拟兴奋剂.
- 为了增强记忆特征,如保留时间和切换行为.
主要方法:
- 使用5纳米厚的内在体与和接触器进行虚拟兴奋剂,以 p*i-n* 配置.
- 采用两个合的极性门和一个控制门,用于偏差诱导的静电兴奋剂 (bias-ED) 和载体调制.
- 实现了可重新配置通道操作的反机制 (p-或n-通道模式).
主要成果:
- 实现了大约10^9.9的高开/关电流比.
- 证明了大约0.2μV dec^-1.的急切切换行为.
- 显示了短写入时间为10 ns和优秀的保留 (持有> 100 s,阅读> 600 s).
结论:
- 拟议的设备成功地消除了兴奋剂和电容器的要求,简化了制造.
- 虚拟兴奋剂和可重新配置通道操作为下一代DRAM提供了一个有希望的途径.
- 实现的内存特征表明了高性能,低功耗内存设备的巨大潜力.
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