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在LiNbO3/SiC上的高性能LL-SAW共振器中,通过引入超薄的中间氧化物层来进行带边调制
Juxing He1, Shibin Zhang1, Pengcheng Zheng1
1State Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100190, China.
Ultrasonics
|November 8, 2024
概括
研究人员改进了高频声学过器,通过在碳化设备上的酸酸上添加中间氧化物层. 这提高了纵向泄漏表面声波 (LL-SAW) 共振器的质量因子 (Q),以获得更好的移动通信过器.
科学领域:
- 材料科学 材料科学 材料科学
- 声学设备 声学设备
- 半导体技术 半导体技术
背景情况:
- 高频声学过器对于快速的信息传输至关重要.
- 纵向泄漏表面声波 (LL-SAW) 设备为这些应用提供了独特的优势.
- 在碳化 (LiNbO3/SiC) 上基酸的现有LL-SAW设备面临着低质量因子 (Q) 的挑战.
研究的目的:
- 为了提高LL-SAW共振器在LiNbO3/SiC上的带内性能.
- 为了研究引入100nm中间氧化物层的影响.
- 为了提高质量因子 (Q),而不会降低虚假响应.
主要方法:
- 分散曲线的有限元法 (FEM) 分析.
- 模拟具有和没有中间氧化物层的LL-SAW共振器结构.
- 一端口LL-SAW共振器的制造和测量.
主要成果:
- FEM分析成功地解释了低Q因子,并预测了Q增强.
- 引入的100nm氧化物层在传输带中改善了Bode Q.
- 实现了领先的性能指标:63.87dB峰谷入口比,~530波德Q,15.66%k_eff^2和6187.3m/s相位速度.
- 观察到SH1模式的共振频率转移到更高频率.
结论:
- 中间氧化物层有效地提高了LL-SAW对LiNbO3/SiC的共振器的性能.
- 这种方法可以为高频移动通信设计下一代过器.
- 展示的共振器具有最先进的性能特征.
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