在金属有机框架中设计基非桥接位,以提高储能
Lanju Sun1,2, Chongzhi Zhu3, Lukun Li2
1Qingdao Engineering Research Center of Agricultural Recycling Economy Materials, College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, 266109, Qingdao, China.
Angewandte Chemie (International ed. in English)
|November 11, 2024
概括
在金属有机框架 (MOF) 中引入非桥梁缺陷可以显著提高它们在离子电池 (LIB) 中的性能. 这种缺陷工程方法提高了存储能力和速率性能,为先进的电池技术铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术 纳米技术
背景情况:
- 金属有机框架 (MOF) 显示出对储能应用的前景.
- 在离子电池 (LIB) 中使用MOFs有限,因为完全协调阻碍了离子运输.
- 在MOF中缺陷工程是一种新兴的策略,用于定制材料属性.
研究的目的:
- 调查MOF中非桥梁缺陷部位对储存性能的影响.
- 阐明这些缺陷在增强 LIBs 的电化学性质中的作用.
- 为了比较缺陷工程MOF与原始MOF的性能.
主要方法:
- 使用同源配体合成原始MOF (p-MOF) 和缺陷工程的MOF (d-MOF).
- 使用光谱和冷低剂量电子显微镜进行表征,以识别和分析缺陷部位.
- 密度函数理论 (DFT) 计算以建模Li+在缺陷部位的吸附和迁移.
- 电化学测试用于评估储能和速率性能.
主要成果:
- 验证了d-MOF中非桥梁缺陷点的存在和局部结构.
- DFT的计算显示,在非桥接地点增加了+吸附和降低了迁移障碍.
- 与p-MOF相比,d-MOF显示出更高的储能 (761 mAh g-1 在0.05 A g-1)
- d-MOF表现出极好的速率性能 (203 mAh g-1 在5 A g-1).
结论:
- MOF中的非桥梁缺陷点在量身定制存储性能方面发挥着至关重要的作用.
- MOFs的缺陷工程为开发高性能LIB提供了一个可行的策略.
- 这种方法在LIB应用中显著优于传统的MOF结构.
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