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Updated: Jun 7, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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用于高性能应用的10nm以下单层InAs晶体管中的弹道运输

Tianruo Xie1, Yuliang Mao1,2

  • 1School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China. ylmao@xtu.edu.cn.

Physical chemistry chemical physics : PCCP
|November 11, 2024
PubMed
概括

单层InAsH2 MOSFET显示出未来电子产品的卓越性能. 优化的合和底层符合半导体路线图要求,直至4.0纳米门长度.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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