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解决短通道IGZO TFT中的移动性高估问题,使用Gated Van der Pauw方法

Woo-Seok Lee1,2, Jaeho Lee1,2, Amarja Katware1,2

  • 1Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea.

ACS applied materials & interfaces
|November 11, 2024
PubMed
概括

精确测量短通道的氧化 (IGZO) 薄膜晶体管 (TFT) 中的场效应移动性是具有挑战性的,因为接触电阻. 封闭的范德波夫方法精确地提取了板材的阻力,从而能够准确地评估移动性.

关键词:
接触电阻 接触电阻 接触电阻现场效应移动性的移动性有关门的范德帕夫 (Gated van der Pauw) 是一个−−-氧化物薄膜晶体管的晶体管板材的阻力 板材的阻力

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