提高统一性,读取电压边缘,并保持在三维和自我纠正的垂直Pt/Ta2O5/Al2O3/TiN内存电源
Tae Won Park1, Jiwon Moon1, Dong Hoon Shin1
1Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
ACS applied materials & interfaces
|November 12, 2024
概括
这项研究介绍了一种基于Ta2O5的新型自我校正记忆器 (SRM),具有Al2O3层,可提高高级记忆和神经网络的统一性和保留性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术 纳米技术
背景情况:
- 记忆器对于下一代电子产品至关重要.
- 提高memristor性能是高密度存储和神经形态计算的关键.
研究的目的:
- 开发一种基于Ta2和O5的自我纠正记忆器 (SRM),以提高统一性和保留性.
- 评估设备在存储级内存和神经网络应用中的性能.
主要方法:
- 制造Pt/Ta2O5/Al2O3/TiN (PTAT) 设备. 这些设备的制造
- 电气性质的表征,包括纠正比率,开/关比率,耐久性和保留.
- 在三层4x4垂直电阻随机访问存储器 (VRRAM) 结构中进行测试.
- 展示一个完全连接的神经网络的硬件意识培训.
主要成果:
- 该PTAT设备实现了105的整形比率,104的开/关比率,2x106的耐久性,在150°C时保持10s.
- 对于设备对设备 (0.23 LRS, 0.22 HRS) 和周期对周期 (0.38 LRS, 0.11 HRS) 测量的低变化系数 (CV) 表示均切换.
- 成功实施神经网络的硬件意识培训.
结论:
- 基于Al2O3的接口层显著改善了基于Ta2O5的SRM.
- 该PTAT设备在3DVRRAM和低功耗神经网络中表现出高性能和可靠性.
- 这项技术是未来高密度存储应用的有希望的候选者.
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