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高性能Si-MoS₂异质嵌入式DRAM的不同类型

Kai Xiao¹, Jing Wan², Hui Xie¹

¹School of Information Science and Technology, Fudan University, Shanghai, P. R. China.

Nature communications

|November 12, 2024

概括

一个新的异质内存将和二硫化物 (MoS2) 结合起来,用于高级嵌入式动态RAM (eDRAM). 这一突破显著改善了高性能处理器的数据保留和集成密度.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

嵌入式动态RAM (eDRAM) 对于高性能处理器缓存至关重要.
传统的增益电池 (GC) eDRAM 受到短时间数据保留的影响.
一个晶体管和一个电容器 (1T1C) 的eDRAM需要重的支柱电容器.

研究的目的:

开发一个无电容的eDRAM解决方案,解决保留和集成的挑战.
在混合设计中利用 (Si) 和二硫化 (MoS2) 的独特特性.
为了提高先进处理器的缓存性能.

主要方法:

使用Si和MoS2.2,制造一个异质的两晶体管无电容的eDRAM (2T-eDRAM).
使用MoS2用于写入晶体管 (低OFF电流) 和Si用于读取晶体管 (高驱动电流).
实现一个三维 (3D) 堆叠设计与后端线 (BEOL) 处理.

主要成果:

与只有Si或MoS2的对应物相比,数据保留实现了1000倍的增强.
感觉边缘增加了100倍.
证明了6000s的数据保留,35μA/μm的感知边缘,以及5ns的访问速度.
通过3D堆叠实现了双倍的集成密度.
保持了CMOS逻辑兼容性.

结论:

Si-MoS2 2T-eDRAM提供了卓越的性能,克服了传统eDRAM的局限性.
这种混合技术可以实现更高的集成密度和更高的缓存效率.
代表了用于高性能计算的内存技术的重大进步.

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