Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

708
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
708
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

295
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
295

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Efficient and Safe Membrane-Free Flow Electrolyzer for Formate Synthesis and Direct Fuel Cell Integration.

Angewandte Chemie (International ed. in English)·2026
Same author

AI-Assisted Electron Microscopy in Structure-Performance Analysis of Advanced Catalysts: From Atomic Resolution to Statistical Significance.

Nano letters·2026
Same author

Efficient and durable light-alkane oxidation over sintered Pt catalysts.

Nature communications·2026
Same author

Interstitial C/N Doping Stabilizes Pd@Pt Core-Shell Electrocatalysts by Atomic-Scale Interfacial Anchoring and Metal Dissolution Suppression.

Angewandte Chemie (International ed. in English)·2026
Same author

Monolithic integration of p- and n-type doped 2D WSe<sub>2</sub> for wafer-scale complementary logic circuits.

Nature communications·2026
Same author

Highly Selective Electroreduction of CO<sub>2</sub> to Formate Over Intermetallic Ag<sub>3</sub>Sn Catalysts.

Small (Weinheim an der Bergstrasse, Germany)·2026

相关实验视频

Updated: Jun 7, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.7K

高性能Si-MoS2异质嵌入式DRAM的不同类型

Kai Xiao1, Jing Wan2, Hui Xie1

  • 1School of Information Science and Technology, Fudan University, Shanghai, P. R. China.

Nature communications
|November 12, 2024
PubMed
概括
此摘要是机器生成的。

一个新的异质内存将和二硫化物 (MoS2) 结合起来,用于高级嵌入式动态RAM (eDRAM). 这一突破显著改善了高性能处理器的数据保留和集成密度.

更多相关视频

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K
Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.0K

相关实验视频

Last Updated: Jun 7, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.7K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K
Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.0K

科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 半导体物理 半导体物理

背景情况:

  • 嵌入式动态RAM (eDRAM) 对于高性能处理器缓存至关重要.
  • 传统的增益电池 (GC) eDRAM 受到短时间数据保留的影响.
  • 一个晶体管和一个电容器 (1T1C) 的eDRAM需要重的支柱电容器.

研究的目的:

  • 开发一个无电容的eDRAM解决方案,解决保留和集成的挑战.
  • 在混合设计中利用 (Si) 和二硫化 (MoS2) 的独特特性.
  • 为了提高先进处理器的缓存性能.

主要方法:

  • 使用Si和MoS2.2,制造一个异质的两晶体管无电容的eDRAM (2T-eDRAM).
  • 使用MoS2用于写入晶体管 (低OFF电流) 和Si用于读取晶体管 (高驱动电流).
  • 实现一个三维 (3D) 堆叠设计与后端线 (BEOL) 处理.

主要成果:

  • 与只有Si或MoS2的对应物相比,数据保留实现了1000倍的增强.
  • 感觉边缘增加了100倍.
  • 证明了6000s的数据保留,35μA/μm的感知边缘,以及5ns的访问速度.
  • 通过3D堆叠实现了双倍的集成密度.
  • 保持了CMOS逻辑兼容性.

结论:

  • Si-MoS2 2T-eDRAM提供了卓越的性能,克服了传统eDRAM的局限性.
  • 这种混合技术可以实现更高的集成密度和更高的缓存效率.
  • 代表了用于高性能计算的内存技术的重大进步.