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Updated: Apr 12, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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在有缺陷的MoS2膜中调整电子和功能性质,通过对硫原子空隙的表面图案进行调整

Denis Gentili1, Gabriele Calabrese2, Eugenio Lunedei1

  • 1Istituto per lo Studio dei Materiali Nanostrutturati (ISMN)- Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, Bologna, 40129, Italy.

Small methods
|November 13, 2024
PubMed
概括

表面缺陷纳米图纸精确控制二硫化物 (MoS2) 薄膜的电子和功能性质. 这种方法增强了进化反应的电催化活性.

关键词:
缺陷工程是什么?缺陷工程是什么?气演化反应反应的反应二硫化物是一种二硫化物.纳米光刻法纳米光刻法图案设计 图案设计硫空缺职位 硫空缺职位调电子属性 调电子属性

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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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