嵌入GeSe的金属氧化物双异质连接,以促进自偏和高效的NIR光检测
Muhammad Hussain1,2, Sohail Abbas3, Usama Waleed Qazi4
1Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, South Korea. jwjung@sejong.ac.kr.
Nanoscale
|November 13, 2024
概括
与氧化/异质连接集成的化可实现高效,零偏差的近红外光检测. 这一进步显著提高了光电子应用的响应性和检测性.
科学领域:
- 光电子和材料科学 材料科学
- 半导体设备物理 半导体设备物理
背景情况:
- 红外辐射检测对于通信,成像和传感至关重要.
- 金属氧化物异质连接被探索用于光检测,但通常需要外部偏差.
- 高效的电荷载体分离是高性能光电探测器的关键.
研究的目的:
- 开发一个高效的近红外光探测器,在零偏差条件下运行.
- 为了研究烯化物 (GeSe) 介层对氧化物 (NiO) / (Si) 异质连接的作用.
- 为了提高光检测性能指标,如响应性和检测性.
主要方法:
- 制造一个NiO/GeSe/Si异质连接装置.
- 在近红外 (850 nm) 照明下对该设备的光电子特性进行表征.
- 评价光检测性能,包括响应性,检测性,光电流与暗电流的比率,噪声等效功率和响应时间.
主要成果:
- NiO/GeSe/Si异质连接在850nm时表现出高效的光检测,没有外部偏差.
- 整合GeSe中间层显著提高了外部响应能力 (0.22到3300mA/W) 和检测能力 (1.24×107到20×109斯).
- 关键性能指标,包括正常化的光电流与暗电流比率,噪声等效功率和上升/下降时间得到了显著提高.
结论:
- 将GeSe中间层集成到NiO/Si异质连接中是一种可行的策略,可以实现高性能,自偏光检测.
- 半导体介层可以在异质连接装置中促进更好的电荷载体分离和传输.
- 这种方法有望在各种光电子应用中推进自偏和宽带光探测器.
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