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相关概念视频

MOSFET01:16

MOSFET

426
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
426
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

295
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
295
Non-ohmic Devices00:51

Non-ohmic Devices

1.0K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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Semiconductors01:22

Semiconductors

647
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

323
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
323
Characteristics of MOSFET01:17

Characteristics of MOSFET

347
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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基于晶圆尺度2D HfS2的记忆器阵列,用于双模式物理非克隆功能.

Haofei Zheng1,2, Lingqi Li1, Yu-Chieh Chien1

  • 1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore.

ACS applied materials & interfaces
|November 13, 2024
PubMed
概括

本研究介绍了一种使用二维 hafnium disulfide 进行增强物理非克隆功能 (PUF) 的新型记忆装置. 该设备通过双重操作模式提供了更好的安全性和可靠性,克服了传统基PUF的局限性.

关键词:
双模式 双模式 双模式的来源是.记忆器的使用者物理上无法克隆的功能.晶圆尺度的 HfS2 晶圆尺度的 HfS2

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 计算机科学 计算机科学

背景情况:

  • 传统的基于的物理不可克隆功能 (PUF) 依赖于制造变化,但受到有限的和噪声易感性的影响.
  • 现有的PUF技术需要在源和安全应用的操作可靠性方面进行增强.

研究的目的:

  • 开发一种用于使用二维 (2D) hafnium disulfide (HfS2) 的物理非克隆函数 (PUF) 的新型记忆装置.
  • 在单个PUF电路模块中集成双操作模式 (可重新配置/安全和超可靠).
  • 为了利用聚晶HfS2的增强源来提高PUF性能.

主要方法:

  • 晶圆尺度 (2英寸) 的制造. 2D HfS2薄膜使用分子光束表达式 (MBE).
  • 聚晶HfS2对晶格缺陷及其对导电线材形成的影响的表征.
  • 整合了具有独特操作特征的双模式PUF设计.
  • 评估PUF性能指标,包括,正常化的哈明距离和相关系数.
  • 应用一个预测性的富里埃回归模型来评估不可预测性.

主要成果:

  • 多晶HfS2薄膜提供了增强的源,包括晶格缺陷,使随机导电丝形成和显著的设备到设备 (D2D) 变化.
  • 拟议的双模式PUF设计实现了近乎理想的性能指标: (~1.0),正常化的哈明距离 (~0.5),以及两种模式的相关系数 (~0.0).
  • 一个预测性的福里埃回归模型证实了双模式PUF的不可预测性,显示平均预测准确率约为50%.

结论:

  • 具有记忆力的HfS2设备为下一代物理不可克隆功能 (PUF) 提供了一个有前途的平台,具有增强的安全性和可靠性.
  • 双模式操作为不同的应用要求提供了灵活性,解决了传统PUF的局限性.
  • 多晶HfS2固有的材料特性有助于强大的和不可预测的PUF反应.